CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2444S3
Spec. No. : C223S3-R Issued Date : 2005....
CYStech Electronics Corp.
Low Vcesat
NPN Epitaxial Planar
Transistor
BTD2444S3
Spec. No. : C223S3-R Issued Date : 2005.06.29 Revised Date :2016.07.18 Page No. : 1/8
Features
The BTD2444S3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-free lead plating and halogen-free package
Symbol
BTD2444S3
Outline
SOT-323 C
B：Base C：Collector E：Emitter
BE
Ordering Information
Device BTD2444S3-0-T1-G
Package SOT-323 (Pb-free and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products
Product name
BTD2444S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C223S3-R Issued Date : 2005.06.29 Revised Date :2016.07.18 Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
VCBO VCEO VEBO
IC ICP Pd Tj Tstg
Limits
40 25 6 800 1.5 (Note) 225 150 -55~+150
Unit
V V V mA A mW °C °C
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob
Min.
40 25 6 180 40 82 100 -
Typ.
40 0.2 0.3 ...
