MMS8550

MCC Features
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMS8550 SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25 OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: 2TY PNP Silicon Plastic-Encapsulate Transistor SOT-23 A D w.DataSheet4U.com Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =3.0Vdc, IC=0) DC Current Gain (IC=50mAdc, V CE=1.0Vdc) DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base- Emitter Voltage (IE =100mAdc) Transistor Frequency (IC=20mAdc, V CE=6.0Vdc, f=30MHz) Min 40 25 5.0 ------Max ------0.1 0.1 0.1 Units Vdc Vdc Vdc F E OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO C B uAdc uAdc G H J uAdc DIMENSIONS ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB 120 50 ------350 --0.6 1.2 1.4 ----Vdc Vdc Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .0...