WT3401

WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 30 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) www.DataSheet4U.com R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -30 Unite V V A A A W C/W C +20 -3 -10 -1.25 1.25 100 -55 to 150 Device Marking WT3401=T01 WEITRON http://www.weitron.com.tw WT-3401 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA +20V VDS=0V, VGS=www.DataSheet4U.com Gate-Source Leakage Current Zero Gate Voltage Drain Current VDS=-24V, VGS=0V Drain-Source On-Resistance VGS=-10V, ID=-3.0A VGS=-4.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-10A Forward Transconductance VDS=-5V, ID=-3A -30 -1 -1.5 -2.5 +100 -1 V V nA uA mΩ 6 5 rDS (on) - 75 100 ID(on) gfs - A S Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=...