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VN0606M Dataheets PDF



Part Number VN0606M
Manufacturers Siliconix
Logo Siliconix
Description N-Channel Enhancement Mode MOSFET Transistors
Datasheet VN0606M DatasheetVN0606M Datasheet (PDF)

TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number TN0601L VN0606L VN0606M www.DataSheet4U.comVN66AFD 60 V(BR)DSS Min (V) rDS(on) Max (W) 1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V VGS(th) (V) 0.5 to 2 0.8 to 2 0.8 to 2 0.8 to 2.5 ID (A) 0.47 0.33 0.39 1.46 Features D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92).

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TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number TN0601L VN0606L VN0606M www.DataSheet4U.comVN66AFD 60 V(BR)DSS Min (V) rDS(on) Max (W) 1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V VGS(th) (V) 0.5 to 2 0.8 to 2 0.8 to 2 0.8 to 2.5 ID (A) 0.47 0.33 0.39 1.46 Features D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage TO-226AA (TO-92) S 1 Benefits D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-237 (Tab Drain) S 1 Applications D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-220SD (Tab Drain) S 1 G 2 G 2 G 2 D 3 Top View TN0601L VN0606L D 3 Top View VN0606M D 3 Top View VN66AFD Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70201. TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg TN0601L 60 "20 0.47 0.29 1.5 0.8 0.32 156 VN0606L 60 "30 0.33 0.21 1.6 0.8 0.32 156 VN0606M 60 "30 0.39 0.25 2 1.0 0.4 125 VN66AFDb 60 "30 1.46 0.92 3 15 6 Unit V A W _C/W _C 8.3 –55 to 150 Siliconix S-52426—Rev. C, 14-Apr-97 1 TN0601L, VN0606L/M, VN66AFD Specificationsa Limits TN0601L VN0606L VN0606M VN66AFD Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Threshold www.DataSheet4U.com Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "30 V TC = 125_C VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V TJ = 125_C 70 1.6 1.7 60 0.5 2 60 60 V 0.8 2 "100 0.8 2.5 "100 "500 nA Gate-Body Leakage IGSS "10 10 500 1 100 10 0.5 2.4 4 2 3.8 2.3 1.2 2.3 1.3 2.5 350 0.3 200 170 170 mS 1.8 3 6 3 6 0.25 1 5 3 6 5 W 1.5 1.5 A 1 mA Zero Gate VoltageDrain Current IDSS VDS = 48 V, VGS = 0 V TJ = 125_C TC = 125_C On State Drain Currentc On-State ID(on) D( ) VDS = 10 V, VGS = 4.5 V VDS = 10 V, VGS = 10 V VGS = 3.5 V, ID = 0.04 A VGS = 4.5 V, ID = 0.25 A TJ = 125_C Drain Source On-Resistance Drain-Source On Resistancec rDS(on) DS( ) VGS = 5 V, ID = 0.3 A VGS = 10 V, ID = 0.5 A TJ = 125_C VGS = 10 V, ID = 1 A TC = 125_C Forward Transconductance c Common Source Output Conductancec gfs gos VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V V, VGS = 0 V V, f = 1 MHz 35 25 6 60 50 10 50 40 10 50 40 10 pF Switchingd Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, A VGEN = 10 V RG = 25 W 8 9 15 15 10 10 15 ns 15 VNDQ06 Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v 300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 Siliconix S-52426—Rev. C, 14-Apr-97 TN0601L, VN0606L/M, VN66AFD Typical Characteristics (25_C Unless Otherwise Noted) Ohmic Region Characteristics 2.0 VGS = 10 V 1.6 I D – Drain Current (A) TJ = 25_C 6V 1.2 5V 0.8 4V 0.4 3V 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) 1.0 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) 2.8 2.4 I D – Drain Current (A) 125_C 0.6 rDS(on) – On-Resistance (W ) 0.8 VDS = 15 V 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS – Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) ID = 0.1 A I D – Drain Current (mA) 8V 7V 80 2.6 V 60 100 Output Characteristics for Low Gate Drive VGS = 10 V 2.8 V TJ = 25_C 40 2.4 V 2.2 V www.DataSheet4U.com 20 2.0 V 1.8 V Transfer Characteristics TJ = –55_C 25_C On-Resistance vs. Gate-to-Source Voltage 1.0 A TJ = 25_C 0.5 A 0.4 0.2 2.5 rDS(on) – Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current rDS(on) – Drain-Source On-Resistance (Normalized) 2.25 2.00 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.0 TJ = 25_C I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50 1.5 VGS = 10 V 1.0 0.5 0 0 0.4 0.8 1.2 1.6 2.0 ID – Drain Current (A) –50 –10 30 70 110 150 TJ – Junction Temperature (_C) Siliconix S-52426—Rev. C, 14-Apr-97 3 TN0601L, VN0606L/M, VN66AFD Typical Characteristics (25_C Unless Otherwise Noted) 10 VDS = 5 V I D – Drain Current (mA) TJ = 150_C 1 C – Capacitance (pF) 100 80 60 40 20 0.01 0.5 125_C 1.0 1.5 –55_C 2.0 C .


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