Document
TN0601L, VN0606L/M, VN66AFD
N-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part Number
TN0601L VN0606L VN0606M www.DataSheet4U.comVN66AFD 60
V(BR)DSS Min (V)
rDS(on) Max (W)
1.8 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V 3 @ VGS = 10 V
VGS(th) (V)
0.5 to 2 0.8 to 2 0.8 to 2 0.8 to 2.5
ID (A)
0.47 0.33 0.39 1.46
Features
D D D D D Low On-Resistance: 1.2 W Low Threshold: <1.6 V Low Input Capacitance: 35 pF Fast Switching Speed: 9 ns Low Input and Output Leakage
TO-226AA (TO-92) S 1
Benefits
D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage
TO-237 (Tab Drain) S 1
Applications
D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays
TO-220SD (Tab Drain) S 1
G
2
G
2
G
2
D
3 Top View TN0601L VN0606L
D
3 Top View VN0606M
D
3 Top View VN66AFD
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70201. TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGS ID IDM PD RthJA RthJC TJ, Tstg
TN0601L 60 "20 0.47 0.29 1.5 0.8 0.32 156
VN0606L 60 "30 0.33 0.21 1.6 0.8 0.32 156
VN0606M 60 "30 0.39 0.25 2 1.0 0.4 125
VN66AFDb 60 "30 1.46 0.92 3 15 6
Unit
V
A
W _C/W _C
8.3 –55 to 150
Siliconix S-52426—Rev. C, 14-Apr-97
1
TN0601L, VN0606L/M, VN66AFD
Specificationsa
Limits
TN0601L VN0606L VN0606M VN66AFD
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Threshold www.DataSheet4U.com
Symbol
Test Conditions
Typb Min
Max Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "30 V TC = 125_C VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V TJ = 125_C
70 1.6 1.7
60 0.5 2
60
60 V
0.8
2 "100
0.8
2.5 "100 "500 nA
Gate-Body Leakage
IGSS
"10 10 500 1 100 10 0.5 2.4 4 2 3.8 2.3 1.2 2.3 1.3 2.5 350 0.3 200 170 170 mS 1.8 3 6 3 6 0.25 1 5 3 6 5 W 1.5 1.5 A 1 mA
Zero Gate VoltageDrain Current
IDSS
VDS = 48 V, VGS = 0 V TJ = 125_C TC = 125_C
On State Drain Currentc On-State
ID(on) D( )
VDS = 10 V, VGS = 4.5 V VDS = 10 V, VGS = 10 V VGS = 3.5 V, ID = 0.04 A VGS = 4.5 V, ID = 0.25 A TJ = 125_C
Drain Source On-Resistance Drain-Source On Resistancec
rDS(on) DS( )
VGS = 5 V, ID = 0.3 A VGS = 10 V, ID = 0.5 A TJ = 125_C VGS = 10 V, ID = 1 A TC = 125_C
Forward Transconductance c Common Source Output Conductancec
gfs gos
VDS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.1 A
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V V, VGS = 0 V V, f = 1 MHz 35 25 6 60 50 10 50 40 10 50 40 10 pF
Switchingd
Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 23 W ID ^ 1 A, A VGEN = 10 V RG = 25 W 8 9 15 15 10 10 15 ns 15 VNDQ06
Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v 300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature.
2
Siliconix S-52426—Rev. C, 14-Apr-97
TN0601L, VN0606L/M, VN66AFD
Typical Characteristics (25_C Unless Otherwise Noted)
Ohmic Region Characteristics
2.0 VGS = 10 V 1.6 I D – Drain Current (A) TJ = 25_C 6V 1.2 5V 0.8 4V 0.4 3V 0 0 1 2 3 4 5 VDS – Drain-to-Source Voltage (V) 1.0 0 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) 2.8 2.4 I D – Drain Current (A) 125_C 0.6 rDS(on) – On-Resistance (W ) 0.8 VDS = 15 V 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 10 VGS – Gate-Source Voltage (V) 0 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) ID = 0.1 A I D – Drain Current (mA) 8V 7V 80 2.6 V 60 100
Output Characteristics for Low Gate Drive
VGS = 10 V 2.8 V TJ = 25_C
40
2.4 V 2.2 V
www.DataSheet4U.com
20 2.0 V 1.8 V
Transfer Characteristics
TJ = –55_C 25_C
On-Resistance vs. Gate-to-Source Voltage
1.0 A TJ = 25_C
0.5 A
0.4
0.2
2.5 rDS(on) – Drain-Source On-Resistance ( W )
On-Resistance vs. Drain Current
rDS(on) – Drain-Source On-Resistance (Normalized)
2.25 2.00
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V
2.0
TJ = 25_C
I D = 1.0 A 1.75 0.2 A 1.50 1.25 1.00 0.75 0.50
1.5
VGS = 10 V
1.0
0.5
0 0 0.4 0.8 1.2 1.6 2.0 ID – Drain Current (A)
–50
–10
30
70
110
150
TJ – Junction Temperature (_C)
Siliconix S-52426—Rev. C, 14-Apr-97
3
TN0601L, VN0606L/M, VN66AFD
Typical Characteristics (25_C Unless Otherwise Noted)
10 VDS = 5 V I D – Drain Current (mA) TJ = 150_C 1 C – Capacitance (pF) 100 80 60 40 20 0.01 0.5 125_C 1.0 1.5 –55_C 2.0 C .