EM640FU16E

merging Memory & Logic Solutions Inc. Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM EM640FU16E Series Low Power, 256Kx16 SRAM Revision History Revision No. 0.0 0.1 www.DataSheet4U.com 0.2 History Initial Draft 2’nd Draft 3’rd Draft Changed Icc, Icc1 value & 55ns product tDW value tLZ1, tLZ2 value is changed from 5ns to 10ns tBW value ischanged from 60ns to 55ns ( 70ns product ) tWP value is changed from 55ns to 50ns ( 70ns product ) tWP value is changed from 45ns to 40ns ( 55ns product ) VDR & IDR measurement condition change Changed ISB1 test conditions Draft Date August 5 , 2002 November 11 , 2002 March 13 , 2003 Remark 0.3 4’th Draft Add Pb-free part number February 13 , 2004 Emerging Memory & Logic Solutions Inc. IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160 Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 merging Memory & Logic Solutions Inc. FEATURES Process Technology : 0.18µ m Full CMOS Organization : 256K x 16 bit Power Supply Voltage : 2.7V ~ 3.3V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA 6.0x7.0 EM640FU16E Series Low Power, 256Kx16 SRAM GENERAL DESCRIPTION...