EM640FV16FW

EM640FV16FW Series Low Power, 256Kx16 SRAM Document Title 256K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 www.DataSheet4U.com History Initial Draft Draft Date August 13 , 2003 Remark Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM640FV16FW Series Low Power, 256Kx16 SRAM 256K x16 Bit Low Power and Low Voltage CMOS Static RAM www.DataSheet4U.com FEATURES - Process Technology : 0.18µm Full CMOS - Organization :256K x16 - Power Supply Voltage => EM640FV16FW : 2.7~3.6V - Three state output and TTL Compatible - Packaged product designed for 55/70ns GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um - Typical top-level metalization : => Metal ( Ti/TiN/Al-Cu 0.5% ) : 5.7K Angstroms thickness - Topside Passivation : => 7K Angstroms PE-SiN - Typical Pad Size : 90.0um x 80.0um - Wafer diameter : 8 inch OPTIONS - C1/W1 : DC Probed Die/Wafer @ Hot Temp - C2/W2 : DC/AC Probed Die/Wafer @ Hot Temp PAD DESCRIPTIONS Name CS1, CS2 OE WE A0~A17 I/O1~I/O16 Function Chip select inpu...