EM641FT8

EM641FT8 Document Title 512K x8 bit Low Power Full CMOS Static RAM Low Power, 512Kx8 SRAM Revision History Revision No. 0.0 www.DataSheet4U.com0.1 History Initial Draft 0.1 Revision IDR Current from 1.5uA to 7uA tOE from 25nsec to 30nsec with 55ns part Draft Date Nov. 20, 2007 Dec. 5, 2007 Remark Preliminary 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Emerging Memory & Logic Solutions Inc. Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM641FT8 512K x8 Bit Low Power CMOS Static RAM FEATURES - Very high speed : 45ns - Process Technology : 0.15um Full CMOS - Organization : 512K x8 - Power Supply Voltage => EM641FT8V : 4.5V~5.5V - Low Data Retention Voltage :1.5V (MIN) - Three state output and TTL Compatible www.DataSheet4U.com - Packaged product designed for 45/55/70ns - KGD based on SOP package structure Low Power, 512Kx8 SRAM GENERAL PHYSICAL SPECIFICATIONS - Backside die surface of polished bare silicon - Typical Die Thickness = 725um +/-15um - Typical top-level metallization : => Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms - Topside Passivation : => Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms - Typical Pad Size : 76.0um x 80.0um - Wafer dia...