IR2301S

www.DataSheet4U.com Data Sheet No. PD60201 Rev.D IR2301(S) & (PbF) HIGH AND LOW SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 5 to 20V Undervoltage lockout for both channels 3.3V, 5V and 15V input logic compatible Matched propagation delay for both channels Logic and power ground +/- 5V offset. Lower di/dt gate driver for better noise immunity Outputs in phase with inputs Also available LEAD-FREE (PbF) Packages 8 Lead PDIP IR2301 8 Lead SOIC IR2301S Description 2106/2301//2108//2109/2302/2304 Feature Comparison The IR2301(S) are high voltage, high speed CrossInput conduction power MOSFET and IGBT drivers with indepenDead-Time Ground Pins Part prevention logic dent high and low side referenced output logic 2106/2301 channels. Proprietary HVIC and latch immune COM HIN/LIN no none 21064 VSS/COM CMOS technologies enable ruggedized mono2108 Internal 540ns COM HIN/LIN yes lithic construction. The logic input is compatible Programmable 0.54~5 µs 21084 VSS/COM with standard CMOS or LSTTL output, down to 2109/2302 Internal 540ns COM IN/SD yes 3.3V logic. The output drivers feature a high Programmable 0.54~5 µs 21094 VSS/COM pulse current buffer stage designed for minimum yes Internal 100ns HIN/LIN COM 2304 driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configu...