Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type darlington
0.7±0.1
Unit: mm
10.0±0.2 5.5±...
Power
Transistors
2SD1276, 2SD1276A
Silicon
NPN triple diffusion planar type darlington
0.7±0.1
Unit: mm
10.0±0.2 5.5±0.2 4.2±0.2 2.7±0.2
For power amplification Complementary to 2SB0950 and 2SB0950A ■ Features
High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw
16.7±0.3
7.5±0.2
φ 3.1±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage www.DataSheet4U.com (Emitter open) 2SD1276 2SD1276A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 4 8 40 2.0 150 −55 to +150 °C °C V A A W
1 2 3
4.2±0.2
Unit V
Solder Dip (4.0)
1.4±0.1
1.3±0.2 0.5+0.2 –0.1
14.0±0.5
0.8±0.1
2.54±0.3
Collector-emitter voltage 2SD1276 (Base open) 2SD1276A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
V
5.08±0.5
1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package
Internal Connection
C B
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1276 2SD1276A 2SD1276 2SD1276A IEBO hFE1 hFE2 Collector-emitter saturation voltage
*
E
Conditions Min 60 80 2.5 200 200 500 500 2 1 000 1 000 10 000 2.0 4.0 20 0.5 4.0 1.0 MHz µs µs µs V mA µA Typ Max Unit V
Symbol 2SD1276 2SD1276A VBE ICBO ICEO VCEO
IC = 30 mA,...
