UPD70F3033B

User’s Manual www.DataSheet4U.com V850/SB1 , V850/SB2 32-Bit Single-Chip Microcontroller Hardware µPD703031A µPD703031AY µPD703032A µPD703032AY µPD703033A µPD703033AY µPD70F3032A µPD70F3032AY µPD70F3033A µPD70F3033AY µPD703030B µPD703030BY µPD703031B µPD703031BY µPD703032B µPD703032BY µPD703033B µPD703033BY µPD70F3030B µPD70F3030BY µPD70F3032B µPD70F3032BY µPD70F3033B µPD70F3033BY TM TM µPD703034A µPD703034AY µPD703035A µPD703035AY µPD703037A µPD703037AY µPD70F3035A µPD70F3035AY µPD70F3037A µPD70F3037AY µPD703034B µPD703034BY µPD703035B µPD703035BY µPD703036H µPD703036HY µPD703037H µPD703037HY µPD70F3035B µPD70F3035BY µPD70F3036H µPD70F3036HY µPD70F3037H µPD70F3037HY Document No. U13850EJ6V0UD00 (6th edition) Date Published February 2003 N CP(K) 1999, 2000, 2003 Printed in Japan [MEMO] www.DataSheet4U.com 2 User’s Manual U13850EJ6V0UD NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All...