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D3SBA10

EIC discrete Semiconductors

SILICON BRIDGE RECTIFIER

D3SBA10 ~ D3SBA80 PRV : 100 ~ 800 Volts Io : 4.0 Amperes FEATURES : * High current www.DataSheet4U.com * * * * * * * cap...


EIC discrete Semiconductors

D3SBA10

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Description
D3SBA10 ~ D3SBA80 PRV : 100 ~ 800 Volts Io : 4.0 Amperes FEATURES : * High current www.DataSheet4U.com * * * * * * * capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Very good heat dissipation Pb / RoHS Free SILICON BRIDGE RECTIFIER 0.150 (3.8) 0.134 (3.4) 0.189 (4.8) 0.173 (4.4) C3 0.603(15.3) 0.579(14.7) + ~ ~ 0.383(9.7) 0.367(9.3) 0.130(3.7) 0.146(3.3) 0.043 (1.1) 0.035 (0.9) 0.709 (18) 0.669 (17) 0.075 (1.9) 0.060 (1.5) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams 0.303 (7.7) 0.287 (7.3) 0.114 (2.9) 0.098 (2.5) 0.032 (0.8) 0.043 (1.1) Dimensions in inches and (millimeters) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Reverse Voltage Maximum Average Forward Current (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sinwave, Single Shot ) Current Squared Time at 1ms ≤ t < 10 ms, Tc=25 °C Maximum Forward Voltage per Diode at I F = 2.0 A. Maximum DC Reverse Current, V R=VRM ( Pulse measurement, Rating of per diod...




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