SST39VF080
8 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39VF080
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories
EOL Data Sheet
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Description
8 Mbit (x8) Multi-Purpose Flash
SST39LF080 / SST39VF080
SST39LF/VF0803.0 & 2.7V 8Mb (x8) MPF memories
EOL Data Sheet
FEATURES:
Organized as 1M x8 Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF080 – 2.7-3.6V for SST39VF080 Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention Low Power Consumption (typical values at 14 MHz) www.DataSheet4U.com – Active Current: 12 mA (typical) – Standby Current: 4 µA (typical) – Auto Low Power Mode: 4 µA (typical) Sector-Erase Capability – Uniform 4 KByte sectors Block-Erase Capability – Uniform 64 KByte blocks Fast Read Access Time: – 55 ns for SST39LF080 – 70 and 90 ns for SST39VF080 Latched Address and Data Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time: 15 seconds (typical) for SST39LF/VF080 Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard – Flash EEPROM Pinouts and command sets Packages Available – 40-lead TSOP (10mm x 20mm) – 48-ball TFBGA (6mm x 8mm)
PRODUCT DESCRIPTION
The SST39LF/VF080 devices are 1M x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufa...
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