KTD1304

BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z High emitter-base voltage. High reverse hFE. Low on resistance. Production specification KTD1304 Pb Lead-free www.DataSheet4U.com APPLICATIONS z Audio muting application. ORDERING INFORMATION Type No. KTD1304 Marking MAX SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current Collector Power Dissipation Junction and Storage Temperature Value 25 20 12 300 30 200 -55~150 Units V V V mA mA mW ℃ Document number: BL/SSSTC113 Rev.A www.galaxycn.com 1 BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Production specification KTD1304 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage www.DataSheet4U.com Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=25V,IE=0 VEB=12V,IC=0 VCE=2V,IC=4mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=10V, IC= 1mA VCB=10V,IE=0,f=1MHz MIN 25 20 12 TYP MAX UNIT V V V Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance 0.1 0.1 200 800 0.25 1...