STK7000

Semiconductor STK7000 N-Channel Enhancement-Mode MOSFET Description High speed switching application. High density cell design for low RDS(ON). Voltage controlled small signal switch www.DataSheet4U.com High saturation current capability. Features Ordering Information Type NO. STK7000 Marking STK7000 Package Code TO-92 Outline Dimensions 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 unit : mm 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 KST-9078-003 1 STK7000 Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Maximum Drain current Pulsed Drain Current Power dissipation Maximum Junction-to-Ambient www.DataSheet4U.com (Ta=25° C) Symbol VDSS VGS ID IDM PD RthJA T J , T stg Ratings 60 ±20 200 500 400 312.5 -55~150 Unit V V mA mA mW °C/W °C Operating Junction and Storage temperature range Electrical Characteristics Characteristic Drian-Source breakdown voltage Gate-Threshold voltage Zero Gate voltage drain current Gate-body leakage On-state drain current * Drain-Source on-resistance * Drain-Source on-resistance * Forward transconductance * Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time (Ta=25° C) Symbol BVDSS VGS(t h) IDSS IGSS ID(on) RDS(ON) RDS(ON) g fs C iss C oss C rss tON tOFF Test Condition ID =10µA, VGS =0 ID =1mA, V DS =VGS VDS =48V, V GS =0 VDS =0V, VGS =± 15V VDS =10V, V GS =4.5V VGS =4.5V, ID =0.075A VGS =10V, I D =0.5A ...