Semiconductor
STK7002B
N-Channel Enhancement-Mode MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• High Voltage: BVD...
Semiconductor
STK7002B
N-Channel Enhancement-Mode MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage: BVDSS=60V(Min.) Low Crss : Crss=3.1pF(Typ.) Low gate charge : Qg=2.8nC(Typ.) Low RDS(on) :RDS(on)=2.8Ω(Typ.) www.DataSheet4U.com
Ordering Information
Type NO. STK7002B Marking 72B Package Code SOT-23
Outline Dimensions
unit : mm
1 3 2
PIN Connections 1. Gate 2. Source 3. Drain
KSD-T5C042-000
1
STK7002B
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
www.DataSheet4U.com
* **
(Ta=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
60 ±20 380 240 1.52 350 380 3.8 380 0.1 150 -55~150
Unit
V V mA mA A mW mA mJ mA mJ °C
Drain Power dissipation
Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
**
Device mounted on 99.5% Alumina 10 x 8 x 0.6mm
Characteristic
Thermal resistance Junction-ambient
Symbol
Rth(J-a)
Typ.
-
Max
357
Unit
℃/W
KSD-T5C042-000
2
STK7002B
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance
www.DataSheet4U.com Forward transfer admittance
(Ta=25°C)
Symbol
BVDSS VGS(th) IDSS IGSS ④ ④ RDS(ON) RDS(ON) gfs Ciss Coss Crss td(on) td(off) Qg Qgs...