FPD750DFN

FPD750DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1850MHZ): 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant Datasheet v3.0 PACKAGE: RoHS 9 TYPICAL APPLICATIONS: Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems. GENERAL www.DataSheet4U.com DESCRIPTION: The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. ELECTRICAL SPECIFICATIONS: PARAMETER Power at 1dB Gain Compression Small-Signal Gain SYMBOL P1dB SSG CONDITIONS VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS MIN 22.5 19 TYP 24 20 MAX UNITS dBm dB Power-Added Efficiency PAE VDS = 5 V; IDS = 50% IDSS; POUT = P1dB 45 % Noise Figure NF VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS 0.7 0.3 1.1 0.9 dB Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) IP3 VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 37 39 180 230 375 200 1 0.7 12 12 1.0...