FPD750SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1.85GHZ):
•
• • • • •
Datasheet 3.0
PACKAGE:
RoHS
25 dB...
FPD750SOT89
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1.85GHZ):
Datasheet 3.0
PACKAGE:
RoHS
25 dBm Output Power (P1dB)
18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC)
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GENERAL DESCRIPTION:
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility
Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm
Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.
TYPICAL APPLICATIONS:
Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain
SYMBOL
P1dB SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS
MIN
23 16.5
TYP
25 18
MAX
UNITS
dBm dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
50
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS
0.8 0.6
1.0
dB
Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 36 38 39 185 230 3...