FPD7612P70

PRELIMINARY PERFORMANCE ♦ 20 dBm Output Power (P1dB) ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 24 GHz ♦ Evaluation Boards Available FPD7612P70 HI-FREQUENCY PACKAGED PHEMT www.DataSheet4U.com GATE LEAD IS ANGLED DESCRIPTION AND APPLICATIONS The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD7612 is also available in die form . Typical applications include gain blocks and medium power stages for applications to 26 GHz. ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1dB Gain Compression Gain at 1dB Gain Compression Power-Added Efficiency Maximum Stable Gain (S21/S12) f = 12 GHz f = 18 GHz Noise Figure Output Third-Order Intercept Point POUT = 9 dBm SCL Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (see Notes) IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| θJC VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.2 mA IGS = 0.2 mA IGD = 0.2 mA VDS > 3V 0.7 12 14.5 45 60 120 80 1 0.9 14 16 335 10 1.3 75 mA mA mS µA V V V °C/W NF IP3 VDS = 5 V; IDS = 25% IDSS VDS = 5V; IDS = 50% ID...