S0402xH

® S0402xH SENSITIVE GATE SCR FEATURES T(RMS) www.DataSheet4U.com I = 4A VDRM = 200V to 800V Low IGT < 200 µA K A G DESCRIPTION The S0402xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO220 non-insulated (Plastic) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current IG = 10 mA diG /dt = 0.1 A/µs. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tc= 110°C Tc= 110°C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 4 2.5 55 50 12.5 100 - 40, + 150 - 40, + 125 260 A2s A/µs °C °C Unit A A A I2t dI/dt Tstg Tj Tl Symbol VDRM VRRM January 1995 Parameter B Repetitive peak off-state voltage Tj = 125°C RGK = 1KΩ 200 Voltage D 400 M 600 N 800 Unit V 1/5 S0402xH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for DC Parameter Value 60 4 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 0.5 W PGM = 5 W (tp = 20 µs) www.DataSheet4U.com IGM = 2 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRGM tgd IH IL VTM IDRM IRRM dV/dt tq Test Conditions VD=12V (DC) RL=140Ω VD=12V (DC) RL=140Ω VD=VDRM RL=3.3kΩ RGK = 1 K...