18NQ11T

PHX18NQ11T N-channel TrenchMOS™ standard level FET M3D308 Rev. 01 — 13 February 2004 Product data 1. Product profile 1.1 Description www.DataSheet4U.com N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology. 1.2 Features s Low on-state resistance s Isolated mounting base s Fast switching s Low thermal resistance 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 110 V s Ptot ≤ 31.2 W s ID ≤ 12.5 A s RDSon ≤ 90 mΩ 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT186A (TO-220F), simplified outline and symbol Description gate (g) source (s) drain (d) mounting base; isolated g s mb d Simplified outline Symbol MBB076 1 2 3 MBK110 SOT186A (TO-220F) Philips Semiconductors PHX18NQ11T N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PHX18NQ11T TO-220F Description Version Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A 3 lead TO-220AB ‘full pack’ Type number w w w . D a t a S h e e t 4 U . c o m 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forwar...