D1963

2SD1963 Transistors Power transistor (50V, 3A) 2SD1963 zFeatures 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W ∗1 ∗2 Collector power dissipation Junction temperature Storage temperature PC Tj Tstg °C °C ∗ ∗ 1 Single pulse, Pw=10ms 2 When mounted on a 40×40×0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 50 20 6 − − 180 − − − Typ. − − − − − − 0.25 150 35 Max. − − − 0.5 0.5 560 0.45 − − Unit V V V IC=50µA IC= 1mA IE= 50µA VCB=40V VEB=5V VCE=2V, IC=0.5A IC/IB=1.5A/ 0.15A VCE=6V, IE= −50mA, f=100MHz VCB=20V, IE=0A, f=1MHz Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency BVEBO ICBO IEBO hFE VCE(sat) fT Cob µA µA − V MHz pF ∗ ∗ Output capacitance ∗ Measured using pulse current. Rev.A 1/2 2SD1963 Transistors zPackaging spec...