Silicon N-Channel MOS FET
2SK1297
Silicon N-Channel MOS FET
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November 1996 Application
High speed power switching
Features
x...
Description
2SK1297
Silicon N-Channel MOS FET
www.DataSheet4U.com
November 1996 Application
High speed power switching
Features
x x x x
x
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1297
Absolute Maximum Ratings (Ta = 25GC)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
www.DataSheet4U.com Channel dissipation
Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch Tstg
2 1
Ratings 60
Unit V V A A A W
r20
40 160 40 100 150 –55 to +150
Channel temperature Storage temperature Notes 1. PW d 10 Ps, duty cycle d 1% 2. Value at TC = 25qC
qC qC
2
2SK1297
Electrical Characteristics (Ta = 25GC)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current
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Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) 60
Typ — — — — — 0.015 0.02 35 3600 1850 450 30 170 700 350 1.2 155
Max — —
Unit V V
Test conditions ID = 10 mA, VGS = 0 IG = r100 PA, VDS = 0 VGS = r16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * ID = 20 A, VGS = 4 V * VDS = 10 V, VGS = 0, f = 1 MHz
1 1
r20
— — 1.0 — —
r10
250 2.0 0.018 0.025 — — — — — — — — — —
Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on s...
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