02N60S5

SPN02N60S5 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated www.DataSheet4U.com Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances Improved transconductance 2 1 3 VPS05163 Type SPN02N60S5 Package SOT-223 Ordering Code Q67040-S4207 Marking 02N60S5 Maximum Ratings Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current, tp limited by Tjmax TA = 25 °C Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T A = 25°C Symbol ID Value 0.4 0.3 Unit A ID puls VGS VGS Ptot Tj , Tstg 2.2 ±20 ±30 1.8 -55... +150 W °C V Operating and storage temperature Rev. 2.1 Page 1 2004-03-30 SPN02N60S5 Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics www.DataSheet4U.com Parameter Symbol min. RthJS RthJA Values typ. max. Unit Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) - 30 110 - -70 K/W Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) IDSS ID=80µΑ, VGS=VDS VDS=600V, VGS...