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SFP730 Dataheets PDF



Part Number SFP730
Manufacturers SemiWell Semiconductor
Logo SemiWell Semiconductor
Description N-Channel MOSFET
Datasheet SFP730 DatasheetSFP730 Datasheet (PDF)

SemiWell Semiconductor SanRex Features ■ ■ SFP730 N-Channel MOSFET Symbol ◀ { ● ● manufactured RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate ▲ { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimi.

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SemiWell Semiconductor SanRex Features ■ ■ SFP730 N-Channel MOSFET Symbol ◀ { ● ● manufactured RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) { 2. Drain ● www.DataSheet4U.com ■ ■ ■ 1. Gate ▲ { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 400 6.5 2.9 26 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 470 9.8 5.3 98 0.78 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 1.28 62.5 Units °C/W °C/W °C/W December, 2002. Rev. 0. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. 1/7 SFP730 Electrical Characteristics Symbol Off Characteristics BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 400V, VGS = 0V VDS = 320V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 3.25A 400 0.544 1 10 100 -100 V V/°C uA uA nA nA Δ BVDSS/ Δ TJ IDSS ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units www.DataSheet4U.com IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.71 4.0 1 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 940 100 25 1220 130 32 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =320V, VGS =10V, ID =6.5A ※ see fig. 12. (Note 4, 5) VDD =200V, ID =6.5A, RG =50Ω ※ see fig. 13. (Note 4, 5) 14 14 110 20 32 12 4 38 38 230 50 42 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 19.4mH, IAS =6.5A, VDD = 50V, RG = 0Ω , Starting TJ = 25°C 3. ISD ≤ 6.5A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =6.5A, VGS =0V IS=6.5A, VGS=0V, dIF/dt=100A/us Min. - Typ. 390 2.2 Max. 6.5 26 1.5 - Unit. A V ns uC 2/7 SFP730 Fig 1. On-State Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : Fig 2. Transfer Characteristics 10 1 www.DataSheet4U.com ID, Drain Current [A] ID, Drain Current [A] 10 1 150 C 10 0 o 25 C -55 C o o ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test 10 0 10 0 10 1 10 -1 2 3 4 5 6 7 8 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage 2.5 Fig 4. On State Current vs. Allowable Case Temperature RDS(ON), Drain-Source On-Resistance [Ω ] VGS = 20V 1.5 VGS = 10V 1.0 IDR, Reverse Drain Current [A] 2.0 10 1 10 0 150℃ 25℃ 0.5 ※ Note : TJ = 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 0.0 0 5 10 15 20 25 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 ID, Drain Current [A] VSD, Source-Drain voltage [V] Fig 5. Capacitance Characteristics 2000 Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd Fig 6. Gate Charge Characteristics 12 1500 VGS, Gate-Source Voltage [V] 10 VDS = 320 V VDS = 200 V Capacitance [pF] ※ Notes : 1. VGS = 0V 2. f=1MHz 8 1000 Ciss 6 4 500 Coss 0 2 ※ Note : ID = 6.5 A Crss 0 5 10 15 20 25 30 35 40 45 50 0 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3/7 SFP730 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.


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