Document
SemiWell Semiconductor SanRex
Features
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SFP730
N-Channel MOSFET
Symbol
◀
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manufactured
RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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2. Drain
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1. Gate
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3. Source
General Description
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
400 6.5 2.9 26
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
470 9.8 5.3 98 0.78 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
1.28 62.5
Units
°C/W °C/W °C/W
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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SFP730
Electrical Characteristics
Symbol Off Characteristics
BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 400V, VGS = 0V VDS = 320V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 3.25A 400 0.544 1 10 100 -100 V V/°C uA uA nA nA Δ BVDSS/ Δ TJ IDSS ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
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IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.71 4.0 1 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 940 100 25 1220 130 32 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =320V, VGS =10V, ID =6.5A ※ see fig. 12.
(Note 4, 5)
VDD =200V, ID =6.5A, RG =50Ω ※ see fig. 13.
(Note 4, 5)
14 14 110 20 32 12 4
38 38 230 50 42 nC ns
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Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr ※ NOTES
1. Repeativity rating : pulse width limited by junction temperature 2. L = 19.4mH, IAS =6.5A, VDD = 50V, RG = 0Ω , Starting TJ = 25°C 3. ISD ≤ 6.5A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature.
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET IS =6.5A, VGS =0V IS=6.5A, VGS=0V, dIF/dt=100A/us
Min.
-
Typ.
390 2.2
Max.
6.5 26 1.5 -
Unit.
A V ns uC
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SFP730
Fig 1. On-State Characteristics
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
Fig 2. Transfer Characteristics
10
1
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ID, Drain Current [A]
ID, Drain Current [A]
10
1
150 C
10
0
o
25 C -55 C
o
o
※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃
※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test
10
0
10
0
10
1
10
-1
2
3
4
5
6
7
8
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
2.5
Fig 4. On State Current vs. Allowable Case Temperature
RDS(ON), Drain-Source On-Resistance [Ω ]
VGS = 20V
1.5
VGS = 10V
1.0
IDR, Reverse Drain Current [A]
2.0
10
1
10
0
150℃ 25℃
0.5
※ Note : TJ = 25℃
※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 5. Capacitance Characteristics
2000
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Fig 6. Gate Charge Characteristics
12
1500
VGS, Gate-Source Voltage [V]
10
VDS = 320 V VDS = 200 V
Capacitance [pF]
※ Notes : 1. VGS = 0V 2. f=1MHz
8
1000
Ciss
6
4
500
Coss
0
2
※ Note : ID = 6.5 A
Crss
0 5 10 15 20 25 30 35 40 45 50
0
0
5
10
15
20
25
30
35
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
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SFP730
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
1.