Document
PRELIMINARY
SemiWell Semiconductor
SFP95N03L
Logic N-Channel MOSFET
Features
■ ■
Low RDS(on) (0.0085Ω )@VGS=10V
Symbol
1. Gate
◀
{
{
2. Drain
Low Gate Charge (Typical 39nC) ■ Low Crss (Typical 185pF) ■ Improved dv/dt Capability www.DataSheet4U.com ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (175°C)
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▲
● ●
{
3. Source
General Description
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 3) (Note 1) (Note 6)
Parameter
Value
30 95 67.3 380
Units
V A A A V mJ V/ns W W/°C °C °C
±20
450 7.0 150 1.0 - 55 ~ 175 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
1.0 62.5
Units
°C/W °C/W °C/W
September, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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SFP95N03L
Electrical Characteristics
Symbol Off Characteristics
BVDSS Δ BVDSS/ Δ TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-Source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 30V, VGS = 0V VDS = 24V, TC = 150 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 47.5A VGS =5 V, ID = 47.5A 30 0.023 1 10 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
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IDSS
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 1.0 0.0065 0.0085 3.0 0.0085 0.0115 V Ω
Dynamic Characteristics
Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 1015 845 185 1320 1110 240 pF
Dynamic Characteristics
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =24V, VGS =5V, ID =95A ※ see fig. 12.
(Note 4, 5)
VDD =15V, ID =95A, RG =50Ω ※ see fig. 13.
(Note 4, 5)
45 165 70 140 39 13 18
100 340 150 290 51 nC ns
-
Source-Drain.