2SD1588

'$7$ 6+((7 SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES Mold package that does not require an insulating board or www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) insulation bushing Large current capacity in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.5 V MAX. (@5 A) Ideal for use in ramp drivers or inductance drivers Complementary transistor: 2SB1097 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (TC = 25°C) PT (TA = 25°C) Tj Tstg Ratings 100 60 7.0 7.0 15 3.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C (OHFWURGH &RQQHFWLRQ ! %DVH ! &ROOHFWRU ! (PLWWHU * PW ≤ 300 µs, duty cycle ≤ 10% ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Symbol ICBO IEBO hFE1** hFE2** VCE(sat)** VBE(sat)** Conditions VCB = 80 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 1.0 V, IC = 3 A VCE = 1.0 V, IC = 5 A IC = 5 A, IB = 0.5 A IC = 5 A, IB = 0.5 A 40 20 0.5 1.5 V V MIN. TYP. MAX. 10 10 200 Unit µA µA ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%/pe...