INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4368
DESCRIPTION ·Collector-Emitt...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC4368
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: VCEO= 150V(Min) ·Complement to Type 2SA1657
APPLICATIONS ·Designed for TV, monitor vertical output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150 V
VCEO
Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
5.0 V
IC Collector Current-Continuous
1.5 A
IB Base Current-Continuous
Collector Power Dissipation @TC= 25℃ PC Collector Power Dissipation @Ta= 25℃
TJ Junction Temperature
Tstg Storage Temperature
0.5 A
20 W
2
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC4368
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
ICBO Collector Cutoff Current
VCB= 120V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE DC Current Gain
IC= 500mA; VCE= 10V
COB Collector Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 500m A; VCE= 10V
150 V 1.5 V 10 μA 10 μA
40 140 35 pF 4 MHz
isc Website：www.iscsemi.cn
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