85T03GH MOSFET Datasheet

85T03GH Datasheet, PDF, Equivalent


Part Number

85T03GH

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

APE

Total Page 6 Pages
Datasheet
Download 85T03GH Datasheet


85T03GH
Advanced Power
Electronics Corp.
AP85T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Fast Switching
G
D
S
BVDSS
RDS(ON)
ID
30V
6mΩ
75A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP85T03GJ) is
available for low-profile applications.
G D S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
30
+20
75
55
350
107
0.7
-55 to 175
-55 to 175
Value
1.4
110
Units
V
V
A
A
A
W
W/
Units
/W
/W
Data & specifications subject to change without notice
1
200810235

85T03GH
AP85T03GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=45A
VGS=4.5V, ID=30A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=30A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=175oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V
ID=30A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
VGS=4.5V
Output Charge
Turn-on Delay Time2
VDD=15V,VGS=0V
VDS=15V
Rise Time
ID=30A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
RD=0.5Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
30 -
-V
- 0.02 - V/
- - 6 m
- - 10 m
1 - 3V
- 55 -
S
- - 1 uA
- - 500 uA
- - +100 nA
- 33 52 nC
-8
nC
- 24
nC
- 24.5 39 nC
- 11 - ns
- 77 - ns
- 35 - ns
- 67 - ns
- 2700 4200 pF
- 550 - pF
- 380 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=45A, VGS=0V
IS=30A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.3 V
- 28 - ns
- 10 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2


Features AP85T03GH/J RoHS-compliant Product Adva nced Power Electronics Corp. ▼ Low Ga te Charge www.DataSheet4U.com N-CHANNE L ENHANCEMENT MODE POWER MOSFET D BVD SS RDS(ON) ID 30V 6mΩ 75A ▼ Simple Drive Requirement ▼ Fast Switching G S Description The TO-252 package is w idely preferred for all commercial-indu strial surface mount applications and s uited for low voltage applications such as DC/DC converters. The through-hole version (AP85T03GJ) is available for lo w-profile applications. G D G D S TO- 252(H) S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@T C=100℃ IDM PD@TC=25℃ TSTG TJ Parame ter Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current, VGS @ 1 0V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 +20 7 5 55 350 107 0.7 -55 to 175 -55 to 175 Units V V A A A W W/ ℃ ℃ ℃ Tota l Power Dissipation Linear Derating Fac tor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum T.
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