Document
STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP6NC80Z/FP
www.DataSheet4U.com STB6NC80Z/-1
s s
VDSS 800V 800V
RDS(on) < 1.8 Ω < 1.8 Ω
ID 5.4 A 5.4 A
1 3
s s s
TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
D²PAK TO-220
3 1 2
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
s
I²PAK (Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (q ) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
.(*)Pulse
Value STP(B)6NC80Z(-1) 800 800 ± 25 5.4 3.4 21 125 1 ±50 3 3 -–65 to 150 150 2000 5.4(*) 3.4(*) 21(*) 40 0.32 STP6NC80ZFP
Unit V V V A A A W W/°C mA KV V/ns V °C °C
(•)Pulse width limited by safe operating area
December 2002
(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX width Limited by maximum temperature allowed 1/13
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / D²PAK / I²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 30 300 TO-220FP 3.13 °C/W °C/W °C
AVALANCHE CHARACTERISTICS
Symbol I www.DataSheet4U.com AR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 5.4 237 Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS ∆BVDSS/∆TJ IDSS IGSS Parameter Drain-source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 ID = 1 mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 800 0.9 1 50 ±10 Typ. Max. Unit V V/°C µA µA µA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 3 A Min. 3 Typ. 4 1.5 Max. 5 1.8 Unit V Ω
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 7 1600 125 12 Max. Unit S pF pF pF
2/13
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd
www.DataSheet4U.com SWITCHING
Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Test Conditions VDD = 400 V, ID = 3 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 640V, ID = 6A, VGS = 10V
Min.
Typ. 26 10 45 12 18
Max.
Unit ns ns nC nC nC
OFF
Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 640V, ID = 6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 11 13 19 Max. Unit ns ns ns
Symbol tr(Voff) tf tc
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5.4 A, VGS = 0 ISD = 6 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) 850 8.1 19 Test Conditions Min. Typ. Max. 5.4 21 1.6 Unit A A V ns µC A
GATE-SOURCE ZENER DIODE
Symbol BVGSO αT Rz Parameter Gate-Source Breakdown Voltage Voltage Thermal Coefficient Dynamic Resistance Test Conditions Igs=± 1mA (Open Drain) T=25°C Note(3) ID = 50 mA, VGS = 0 Min. 25 1.3 90 Typ. Max. Unit V 10-4/°C Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to prot.