MCR218-6FP

MCR218-6FP , MCR218-10FP Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts www.DataSheet4U.com 80 A Surge Current Capability Insulated Package Simplifies Mounting Indicates UL Registered — File #E69369 Device Marking: Logo, Device Type, e.g., MCR218–6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MCR218–6FP MCR218–10FP On-State RMS Current (TC = +70°C)(2) (180° Conduction Angles) Peak Nonrepetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Gate Power (TC = +70°C, Pulse Width Symbol VDRM, VRRM 400 800 IT(RMS) ITSM 8.0 100 Amps Amps Value Unit Volts http://onsemi.com ISOLATED SCRs ( 8 AMPERES RMS 400 thru 800 VOLTS ) G A K 1 2 3 I2t 26 5.0 0.5 2.0 1500 –40 to +125 –40 to +150 A2s Watts Watt 1 Amps Volts °C °C v 1.0 µs) PGM PG(AV) IGM V(ISO) TJ Tstg ISOLATED TO–220 Full Pack CASE 221C STYLE 2 Forward Average Gate Power (TC = +70°C, t = 8.3 ms) Forward Peak Gate Current (TC = +70°C, Pulse Width PIN ASSIGN...