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CY14B104N Datasheet, Equivalent, 16 nvSRAM.

4-Mbit (512K x 8/256K x 16) nvSRAM

4-Mbit (512K x 8/256K x 16) nvSRAM

 

 

 

Part CY14B104N
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
Feature PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell.
The memory is orga nized as 512K words of 8 bits each or 2 56K words of 16 bits each.
The embedded nonvolatile elements incorporate Quant umTrap technology, producing the world s most reliable nonvolatile memory.
T he SRAM provides infinite read and writ e cycles, while independent nonvolatile data resides in the highly reliable Qu antumTrap cell.
Data transfers from the SR .
Manufacture Cypress Semiconductor
Datasheet
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Part CY14B104N
Description 4-Mbit (512K x 8/256K x 16) nvSRAM
Feature PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell.
The memory is orga nized as 512K words of 8 bits each or 2 56K words of 16 bits each.
The embedded nonvolatile elements incorporate Quant umTrap technology, producing the world s most reliable nonvolatile memory.
T he SRAM provides infinite read and writ e cycles, while independent nonvolatile data resides in the highly reliable Qu antumTrap cell.
Data transfers from the SR .
Manufacture Cypress Semiconductor
Datasheet
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CY14B104N

CY14B104N
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