CY14B104N

PRELIMINARY CY14B104L, CY14B104N 4-Mbit (512K x 8/256K x 16) nvSRAM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Functional Description The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control. 15 ns, 25 ns, and 45 ns access times Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) Hands off automatic STORE on power down with only a small capacitor STORE to QuantumTrap® nonvolatile elements initiated by software, device pin or AutoStore® on power down RECALL to SRAM initiated by software or power up Infinite read, write, and recall cycles 8 mA typical ICC at 200 ns cycle time 200,000 STORE cycles to QuantumTrap 20 year data retention Single 3V +20%, –10% operation Commercial and industrial temperatures FBGA and TSOP - II packages RoHS compliance www.DataSheet4U.com Logic Block Diagram VCC VCA...