Document
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STS7DNF30L
DUAL N - CHANNEL 30V - 0.018Ω - 7A SO-8 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STS7DNF30L
s
V DSS 30 V
R DS(on) < 0.022 Ω
ID 7 A
www.DataSheet4U.com s TYPICAL RDS(on)
s
= 0.018 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Single O peration Drain Current (continuous) at Tc = 100 o C Single O peration Drain Current (pulsed) T otal Dissipation at Tc = 25 C Dual Operation o T otal Dissipation at Tc = 25 C Sinlge Operation
o o
Value 30 30 ± 20 7 4 28 2 1.6
Un it V V V A A A W W
I DM ( • ) P tot
(•) Pulse width limited by safe operating area
November 1999
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THERMAL DATA
R thj -amb
Tj Ts tg
*Thermal Resistance Junction-ambient
Single Operation Dual Operation Maximum O perating Junction Temperature Storage T emperature
78 62.5 150 -65 to 150
o o
C/W C/W o C o C
(*) Mounted on FR-4 board (Steady State)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l www.DataSheet4U.com V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V
T c = 125 oC
ON (∗)
Symbo l V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 4.5 V Test Con ditions ID = 250 µ A ID = 3.5 A ID = 3.5 A 7 Min. 1 Typ. 1.6 0.018 0.021 Max. 2.5 0.022 0.026 Unit V Ω Ω A
I D(o n)
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 V Min. Typ. 10 1050 250 85 Max. Unit S pF pF pF
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STS7DNF30L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd
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Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge
Test Con ditions V DD = 15 V I D = 3.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) V DD = 24 V ID = 8 A V GS = 5 V
Min.
Typ. 22 60 17.5 4 7
Max.
Unit ns ns
23
nC nC nC
SWITCHING OFF
Symbo l t d(of f) tf tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 15 V I D = 3.5 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) V clamp = 24 V ID = 7 A V GS = 4.5 V R G = 4.7 Ω (Induct ive Load, see fig. 5) Min. Typ. 42 10 11 12 25 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A V GS = 0 50 40 1.6 I SD = 7 A di/dt = 100 A/ µ s T j = 150 o C V DD = 20 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 8 32 1.2 Unit A A V ns nC A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
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Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2
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mm TYP. MAX. 1.75 0.1 0.25 1.65 0.65 0.35 0.19 0.25 0.85 0.48 0.25 0.5 45 (typ.) 4.8 5.8 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.188 0.228 0.025 0.013 0.007 0.010 0.003 MIN.
inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
a3 b b1 C c1 D E e e3 F L M S
0.196 0.244 0.050 0.150 0.157 0.050 0.023
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