JAN2N930

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices www.DataSheet4U.com Qualified Level JAN JANTX JANTXV 2N930 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC Value 45 60 6.0 30 300 600 -55 to +200 Max. 97 Units Vdc Vdc Vdc mAdc mW 0 @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0 mW/0C above TC = +250C 0 TO- 18* (TO-206AA) Unit C/W *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. Max. Unit Vdc 10 10 10 5.0 2.0 2.0 µAdc ηAdc µAdc ηAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 45 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCE = 5.0 Vdc 45 IEBO ICES ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N930, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 10 µAdc, VCE = 5.0 Vdc IC = 500 µAdc, VCE...