HAT2183WP

HAT2183WP Silicon N Channel Power MOS FET Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G0530-0500 Rev.5.00 Oct 21, 2005 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 20 40 20 40 20 30 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C Rev.5.00, Oct 21, 2005, page 1 of 6 HAT2183WP Electrical Characteristics Item Symbol Min Drain to Source breakdown voltage V(BR)DSS 150 Zero Gate voltage Drain current IDSS — Gate to Source leak current IGSS — Gate to Source cutoff voltage VGS(off) 3.0 Forward transfer admittance |yfs| 9 Static Drain to Source on state resistance RDS(on) — Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) —...