HAT2197R

HAT2197R Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 REJ03G0061-0201Z Rev.2.01 Nov.30.2016 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Rev.2.01, Nov.30.2016, page 1 of 7 HAT2197R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation IDR IAP Note 2 EAR Note 2 Pch Note3 Channel to ambient thermal impedance θch-a Note3 30 ±20 16 128 16 16 25.6 2.5 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 30 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance IGSS — IDSS — VGS(off) 1.0 RDS(on) — RDS(on) — |yfs| 22 Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Gate Resistance Rg — Total gate charg...