2SK3001

2SK3001 GaAs HEMT Low Noise Amplifier www.DataSheet4U.com ADE-208-597(Z) 1st. Edition December 1997 Features Excellent low noise characteristics. Fmin = 0.8 dB typ. (3 V, 5 mA, 0.9 GHz) High associated gain. Ga = 18 dB typ. (3 V, 5 mA, 0.9 GHz) Small package. (CMPAK-4) Outline This document may, wholly or partially, be subject to change without notice. This Device is sensitive to Electro Static Discharge. It is recommended to adopt appropriate cautions when handling this transistor. CAUTION This product use GaAs. Since dust or fume of GaAs is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Air. And it should never be thrown out with general industrial or domestic wastes. 2SK3001 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel dissipation www.DataSheet4U.com Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –4 –4 20 100 125 –55 to +125 Unit V V V mA mW °C °C Channel temperature Storage temperature Electrical Characteristics (Ta = 25°C) Item Gate to source leak current Symbol I GSS Min — –0.5 35 Typ — — 50 Max –20 –1.5 70 Unit µA V mA Test Conditions VGS = –4 V, VDS = 0 VDS = 3V, ID = 100 µA VDS = 3 V, VGS = 0 Pulse test Forward transfer admittance |yfs| PG 40 60 — mS VDS = 3 V, ID =10 mA f = 1 kHz Power Gain 15.0 18.0 — dB VDS = 3 V, ID = 5 mA f = 0.9 GHz Noise Figure NF — 0.8 1.2 dB Gate to source cutoff voltage VGS...