OD-880F Datasheet: HIGH-POWER GaAlAs IR EMITTERS





OD-880F HIGH-POWER GaAlAs IR EMITTERS Datasheet

Part Number OD-880F
Description HIGH-POWER GaAlAs IR EMITTERS
Manufacture OptoDiode
Total Page 2 Pages
PDF Download Download OD-880F Datasheet PDF

Features: HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CA SE) .209 .212 • High reliability liq uid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matchin g with ODD-45W photodiode • Wide rang e of linear power output • Hermetical ly sealed TO-46 package .041 .015 .18 3 .186 .152 .154 .100 • Narrow ang le for long distance applications • O D-880F1 selected to meet minimum radian t intensity .017 .030 .040 .036 45° www.DataSheet4U.com CATHODE .197 .205 All surfaces are gold plated. Dimensio ns are nominal values in inches unless otherwise specified. Window caps are we lded to the case. ELECTRO-OPTICAL CHAR ACTERISTICS AT 25°C PARAMETERS Total P ower Output, Po Radiant Intensity, Ie O D-880F OD-880F1 OD-880F OD-880F1 TEST C ONDITIONS IF = 100mA 120 IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 15 TYP 17 8 135 160 880 80 8 1.55 30 17 0.5 0. 5 1.9 MAX UNITS mW mW/sr nm nm Deg Volt s Volts pF µsec µsec Peak Emission Wavelength, λP Spectral Bandwidth at 50%, .

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HIGH-POWER GaAlAs IR EMITTERS
OD-880F
GLASS
DOME
.183 .152
.186 .154
.030
.040
www.DataSheet4U.com
1.00
MIN.
ANODE
(CASE)
.015
.209
.212
.100
.017
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
.041 • Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
CATHODE
.036
.197 45°
.205
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
TEST CONDITIONS
Total Power Output, Po
Radiant Intensity, Ie
OD-880F
OD-880F1
OD-880F
OD-880F1
IF = 100mA
Peak Emission Wavelength, λP
Spectral Bandwidth at 50%, ∆λ
IF = 50mA
Half Intensity Beam Angle, θ
Forward Voltage, VF
Reverse Breakdown Voltage, VR
Capacitance, C
IF = 100mA
IR = 10µA
VR = 0V
Rise Time
Fall Time
MIN
15
120
5
TYP
17
8
135
160
880
80
8
1.55
30
17
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation1
Continuous Forward Current
Peak Forward Current (10µs, 400Hz)2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
190mW
100mA
3A
5V
240°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
-55°C to 100°C
Maximum Junction Temperature
100°C
Thermal Resistance, RTHJA1
Thermal Resistance, RTHJA2
350°C/W Typical
115°C/W Typical
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
MAX
1.9
UNITS
mW
mW/sr
nm
nm
Deg
Volts
Volts
pF
µsec
µsec
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335 Fax: (805) 499-8108
Email: sales@optodiode.com Web Site: www.optodiode.com
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