OD-880F

HIGH-POWER GaAlAs IR EMITTERS 1.00 MIN. GLASS DOME OD-880F FEATURES ANODE (CASE) .209 .212 High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package .041 .015 .183 .186 .152 .154 .100 Narrow angle for long distance applications OD-880F1 selected to meet minimum radiant intensity .017 .030 .040 .036 45° www.DataSheet4U.com CATHODE .197 .205 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie OD-880F OD-880F1 OD-880F OD-880F1 TEST CONDITIONS IF = 100mA 120 IF = 50mA IF = 100mA IR = 10µA VR = 0V 5 MIN 15 TYP 17 8 135 160 880 80 8 1.55 30 17 0.5 0.5 1.9 MAX UNITS mW mW/sr nm nm Deg Volts Volts pF µsec µsec Peak Emission Wavelength, λP Spectral Bandwidth at 50%, ∆λ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Power Dissipation1 Continuous Forward Current Peak Forward Current (10µs, 400Hz)2 Reverse Voltage Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 190mW 100mA 3A 5V 240°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature The...