OD-880W

HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES High reliability liquid-phase epitaxially grown GaAlAs 880nm peak emission for optimum matching with ODD-45W photodiode Wide range of linear power output Hermetically sealed TO-46 package Wide emission angle to cover a large area GLASS .006 HIGH MAX .015 1.00 MIN. ANODE (CASE) .209 .220 .183 .152 .187 .156 .017 .098 .112 .143 .150 .100 .041 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. www.DataSheet4U.com CATHODE .036 45° RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25°C Total Power Output, Po Radiant Intensity, Ie PARAMETERS TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10MA VR = 0V MIN 18 TYP 20 16 80 80 30 17 MAX UNITS mW/sr nm nm mW Peak Emission Wavelength, LP Spectral Bandwidth at 50%, $L Half Intensity Beam Angle, Q Forward Voltage, VF 880 Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 5 1.55 1.9 Volts Volts Msec Msec pF Deg 0.5 0.5 ABSOLUTE MAXIMUM RATINGS AT 25°C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 190mW 100mA 5V 3A Peak Forward Current (10Ms, 400Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25°C 2Derate linearly above 25°C 260°C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature -55°C TO 100°C 400°C/W Typical 135°C/W Typical 100°C 1Heat transfer minimiz...