3028 F-mosFET Datasheet

3028 Datasheet, PDF, Equivalent


Part Number

3028

Description

Silicon N-channel Power F-mosFET

Manufacture

Panasonic

Total Page 1 Pages
Datasheet
Download 3028 Datasheet


3028
Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed
q High-speed switching
q Low ON-resistance
q No secondary breakdown
q Low-voltage drive
q High electrostatic breakdown voltage
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
www.DataShqeeCt4oUn.tcroolmequipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
60
±20
±100
±200
500
V
V
A
A
mJ
Allowable power
dissipation
TC = 25°C
Ta = 25°C PD
100
W
3
Channel temperature
Storage temperature
Tch 150 °C
Tstg
55 to +150
°C
* L = 0.1mH, IL = 100A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance
RDS(on)1
RDS(on)2
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
Thermal resistance between channel and atmosphere Rth(ch-a)
VDS = 50V, VGS = 0
VGS = ±20V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 50A
VGS = 4V, ID = 50A
VDS = 10V, ID = 50A
IDR = 50A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDD = 30V, ID = 50A
VGS = 10V, RL = 0.6
unit: mm
15.5±0.5
φ3.2±0.1
3.0±0.3
5˚ 5˚
4.0
2.0±0.2
1.1±0.1
5.45±0.3
5.45±0.3
0.7±0.1
123
1: Gate
2: Drain
3: Source
TOP-3E Package
Internal Connection
G
D
S
min typ max Unit
10 µA
±10 µA
60 V
1 2.5 V
5 7.5 m
6.5 10 m
50 100
S
1.2 V
9400
pF
3300
pF
1800
pF
40 ns
280 ns
830 ns
2400
ns
1.25 °C/W
41.7 °C/W
1


Features Power F-MOS FETs 2SK3028 (Tentative) Si licon N-Channel Power F-MOS FET s Featu res q Avalanche energy capacity guarant eed q High-speed switching q Low ON-res istance q No secondary breakdown q Low- voltage drive q High electrostatic brea kdown voltage unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 26.5±0.5 1 8.6±0.5 q Contactless relay q Diving circuit for a solenoid q Driving circui t for a motor q Control equipment www.D ataSheet4U.com q Switching power supply 2.0 1.2 5˚ 4.0 2.0±0.2 1.1±0.1 2. 0 5˚ 5˚ 0.7±0.1 s Absolute Maximu m Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Sou rce voltage Drain current DC Pulse Symb ol VDSS VGSS ID IDP EAS* PD Tch Tstg Ra tings 60 ±20 ±100 ±200 500 100 3 150 −55 to +150 Unit V V A A mJ 5.45±0 .3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0. 3 5˚ 1 2 3 1: Gate 2: Drain 3: So urce TOP-3E Package Avalanche energy c apacity Allowable power dissipation Cha nnel temperature Storage temperature * TC = 25°C Ta = 25°C Internal Connection W °C °.
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