Document
Power F-MOS FETs
2SK3028 (Tentative)
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
26.5±0.5
18.6±0.5
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment www.DataSheet4U.com q Switching power supply
2.0 1.2
5˚ 4.0 2.0±0.2 1.1±0.1
2.0
5˚ 5˚
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 60 ±20 ±100 ±200 500 100 3 150 −55 to +150 Unit V V A A mJ
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.3
5˚
1
2
3
1: Gate 2: Drain 3: Source TOP-3E Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
Internal Connection
W °C °C
S G D
L = 0.1mH, IL = 100A, 1 pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 50A VGS = 10V, RL = 0.6Ω Conditions VDS = 50V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 50A VGS = 4V, ID = 50A VDS = 10V, ID = 50A IDR = 50A, VGS = 0 9400 VDS = 10V, VGS = 0, f = 1MHz 3300 1800 40 280 830 2400 1.25 41.7 60 1 5 6.5 50 100 −1.2 2.5 7.5 10 min typ max 10 ±10 Unit µA µA V V mΩ mΩ S V pF pF pF ns ns ns ns °C/W °C/W
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere
2.0
23.4 22.0±0.5
s Applications
5˚
5˚
1
.