5STP42U6500

VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 5600 6500 3460 5440 71.4×103 1.24 0.162 V V A A A V mΩ Phase Control Thyristor 5STP 42U6500 Doc. No. 5SYA1043-02 Oct. 04 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate www.DataSheet4U.com Blocking Maximum rated values 1) Symbol VDSM, VRSM VDRM, VRRM VRSM dV/dtcrit Parameter Conditions f = 5 Hz, tp = 10 ms f = 50 Hz, tp = 10 ms tp = 5 ms, single pulse Exp. to 3750 V, Tvj = 110°C Symbol Conditions IDSM IRSM 5STP 42U6500 5STP 42U6200 6500 V 5600 V 7000 V 6200 V 5300 V 6700 V 2000 V/µs min typ 5STP 42U5800 5800 V 4900 V 6300 V Characteristic values max 700 700 Unit mA mA Forward leakage current Reverse leakage current VDSM, Tvj = 110°C VRSM, Tvj = 110°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 120 typ 135 max 160 50 100 Unit kN m/s m/s Unit kg mm mm mm 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 135 kN, Ta = 25 °C min 34.8 56 typ max 3.6 35.5 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 42U6...