DatasheetsPDF.com

CONTROL THYRISTOR. AT202 Datasheet

DatasheetsPDF.com

CONTROL THYRISTOR. AT202 Datasheet






AT202 THYRISTOR. Datasheet pdf. Equivalent




AT202 THYRISTOR. Datasheet pdf. Equivalent





Part

AT202

Description

PHASE CONTROL THYRISTOR



Feature


ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT202 Repetitive v oltage up to Mean on-state current Surg e current 800 V 635 A 6 kA TARGET SPEC IFICATION Feb 97 - ISSUE : 03 www.Data Sheet4U.com Symbol.
Manufacture

Ansaldo

Datasheet
Download AT202 Datasheet


Ansaldo AT202

AT202; Characteristic Conditions Tj [°C] 15 0 150 150 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive pea k reverse voltage Non-repetitive peak r everse voltage Repetitive peak off-stat e voltage Repetitive peak reverse curre nt Repetitive peak off-state current V= VRRM V=VDRM 800 900 800 30 30 V V V m A mA 150 150 CONDUCTING I I I V V r T (AV) T (AV) TSM M.


Ansaldo AT202

ean on-state current Mean on-state curre nt Surge on-state current I² t On-stat e voltage Threshold voltage On-state sl ope resistance 180° sin, 50 Hz, Th=55 °C, double side cooled 180° sin, 50 H z, Tc=85°C, double side cooled sine wa ve, 10 ms without reverse voltage On-st ate current = 800 A 150 150 150 150 63 5 575 6 180 x1E3 1.19 0.8 0.490 A A kA A²s V V mohm I² t T T.


Ansaldo AT202

(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate o f rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Rever se recovery charge Peak reverse recover y current Holding current, typical Latc hing current, typical From 75% VDRM up to 450 A, gate 10.

Part

AT202

Description

PHASE CONTROL THYRISTOR



Feature


ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 1 6152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/( 0)10 6442510 Tx 270318 ANSUSE I - PHAS E CONTROL THYRISTOR AT202 Repetitive v oltage up to Mean on-state current Surg e current 800 V 635 A 6 kA TARGET SPEC IFICATION Feb 97 - ISSUE : 03 www.Data Sheet4U.com Symbol.
Manufacture

Ansaldo

Datasheet
Download AT202 Datasheet




 AT202
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
TARGET SPECIFICATION
Feb 97 - ISSUE : 03
AT202
Repetitive voltage up to
Mean on-state current
Surge current
800 V
635 A
6 kA
www.DSaytamSbhoeel t4U.cComharacteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 800 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 290 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT202 S 08
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
150 800
150 900
150 800
150 30
150 30
V
V
V
mA
mA
635 A
575 A
150 6
kA
180 x1E3 A²s
150 1.19
V
150 0.8
V
150 0.490
mohm
150 320
150 500
25 1.6
200
150
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
150 0.25
20
8
5
75
1
V
mA
V
V
A
V
W
W
95
20
-30 / 150
4.9 / 5.9
55
°C/kW
°C/kW
°C
kN
g




 AT202
AT202 PHASE CONTROL THYRISTOR
TARGET SPECIFICATION Feb 97 - ISSUE : 03
ANSALDO
www.DataSheet4U.com
Th [°C]
150
140
130
120
110
100
90
80
70
60
50
0
PF(AV) [W]
1000
900
800
700
600
500
400
300
200
100
0
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90°
120°
180°
200 400 600
IF(AV) [A]
DC
800
1000
120°
90°
180°
60°
30°
DC
200 400 600 800 1000
IF(AV) [A]




 AT202
AT202 PHASE CONTROL THYRISTOR
TARGET SPECIFICATION Feb 97 - ISSUE : 03
ANSALDO
www.DataSheet4U.com
Th [°C]
150
140
130
120
110
100
90
80
70
60
50
0
PF(AV) [W]
1000
900
800
700
600
500
400
300
200
100
0
0
DISSIPATION CHARACTERISTICS
SINE WAVE
30°
200
60°
90°
120°
180°
400 600
IF(AV) [A]
800
1000
120°
90°
60°
180°
30°
200 400 600 800 1000
IF(AV) [A]



Recommended third-party AT202 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)