LH28F016LL

LH28F016LL FEATURES 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3 V Write/Erase Operation (3 V VPP) – 2.7 - 3.6 V Write-Erase Operation VSSL CE1 LX A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 CX RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC 120 ns Maximum Access Time (VCC = 3.0 V) 150 ns Maximum Access Time (VCC = 2.7 V) 32 Independently Lockable Blocks (64K) 0.48 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block Revolutionary Architecture – Pipelined Command Execution – Write During Erase – Command Superset of Sharp LH28F016SU 10 µA (MAX.) ICC in CMOS Standby 5 µA (MAX.) Deep Power-Down State-of-the Art 0.6 µm ETOX™ Flash Technology 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP (Type I) Package 28F016LLT-1 Figure 1. TSOP Configuration 1 LH28F016LL 16M (1M × 16, 2M × 8) Flash Memory DQ8 - DQ15 DQ0 - DQ7 OUTPUT BUFFER OUTPUT BUFFER INPUT BUFFER INPUT BUFFER ID REGISTER DATA QUEUE REGISTERS I/O LOGIC BYTE CSR OUTPUT MULTIPLEXER PAGE BUFFERS ESRs CE0 CE1 OE CUI WE WP RP DATA COMPARATOR A0 - A20 INPUT BUFFER Y-DECODER Y GATING/SENSING 64KB BLOCK 30 64KB BLOCK 31 64KB BLOCK 0 64KB BLOCK 1 WSM RY/BY ADD...