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TPD1038F Dataheets PDF



Part Number TPD1038F
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Lamp Drivers High-side Power Switch
Datasheet TPD1038F DatasheetTPD1038F Datasheet (PDF)

TPD1038F Toshiba Intelligent Power Device TPD1038F Silicon Monolithic Power MOS Integrated Circuit Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1038F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions. www.DataSheet4U.com Features • A monolithic power IC with a structure combining a control block.

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TPD1038F Toshiba Intelligent Power Device TPD1038F Silicon Monolithic Power MOS Integrated Circuit Motor, Solenoid, Lamp Drivers High-side Power Switch The TPD1038F is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection and diagnostic functions. www.DataSheet4U.com Features • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a single chip. One side of load can be grounded to a high-side switch. Can directly drive a power load from a microprocessor. Built-in protection short-circuiting. against overheating and load SOP8-P-1.27A Weight:0.08g(typ.) • • • • • • • Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overheating. Up to -(50-VDD)~ -(60-VDD) of counterelectromotive force from an L load can be applied. Low on-resistance : RDS(ON)=120mΩ(max) ( @ VDD = 12 V、Ta = 25℃、Io = 2 A) 8-pin SOP package for surface mounting that can be packed in tape Pin Assignment OUT 1 8 VDD Marking GND 2 7 VDD TPD1038 F Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. DIAG 3 6 VDD IN 4 (TOP VIEW) 5 VDD Due to its MOS structure, this product is sensitive to static electricity. 1 2006-10-31 TPD1038F Block Diagram Bandgap 5V regulator VDD charge pump IN driver MOSFET (π-MOSⅤ) www.DataSheet4U.com current detection overheat detection DIAG OUT GND Pin Description Pin No. 1 2 3 4 5,6,7,8 Symbol OUT GND DIAG IN VDD Function Output pin. When the load is short-circuited and current in excess of the detection current (3A min) flows to the output pin, the output automatically turns on or off. Ground pin. Self-diagnosis detection pin.Goes low when overheating is detected or when output is short circuit with input on (high). N-channel open drain. Input pin. Input is CMOS compatible, with pull down resistor connected. Even if the input is open, output will not accidentally turn on. Power pin. 2 2006-10-31 TPD1038F Timing Chart Input signal Hysteresis 5℃ (typ.) Tch Channel temperature Overcurrent detection Overheating detection 150℃(min) www.DataSheet4U.com Load open Output current Output signal Diagnostic output Thermal shutdown Load open detection Current limit Normal Truth Table Input signal H L H L H L H L H L Diagnosis output H L L L L L H H L H Output signal H L L L L L H H L H Output state on off current limit (switching) off off off on off off off Overheating Operating state Normal Load short Load open Overheating and load open 3 2006-10-31 TPD1038F Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Supply voltage DC Pulse DC Pulse Symbol VDS VDD(1) VDD(2) VIN(1) VIN(2) VDIAG IO IIN IDIAG PD(1) PD(2) Topr Tch Tstg Rating 60 25 60(RS=1Ω,τ=250ms) -0.5~12 VDD(1)+1.5(t=100ms) -0.5~25 Internally limited ±10 5 1.1 0.425 -40~110 150 -55~150 Unit V V V V V V A mA mA W W °C °C °C Input voltage Diagnosis output voltage Output current Input current www.DataSheet4U.com Diagnosis current Power dissipation (Note 1-a) Power dissipation (Note 1-b) Operating temperature Channel temperature Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Thermal resistance Symbol Rth(ch-a) Rating 113.5 (Note1-a) 294.0 (Note1-b) Unit °C /W Note 1: 1-a : Mounted on glass epoxy board (a) 1-b : Mounted on glass epoxy board (b) FR-4 25.4×25.4×0.8 (Unit:mm) FR-4 25.4×25.4×0.8 (Unit:mm) 4 2006-10-31 TPD1038F Electrical Characteristics (Ta=25°C) Characteristics Operating supply voltage Current dissipation H-level input voltage L-level input voltage H-level input current On resistance Output leakage current Diagnosis www.DataSheet4U.com output voltage Diagnosis output current “L”-level “H”-level Symbol VDD(OPR) IDD VIH VIL IIH RDS(ON) IOL VDL IDH IOC(1)(Note2) IOC(2)(Note3) TOT Rop ton toff tDLH tDHL Vclamp Test circuit - - - - - - - - - 1、2 3 - - 4 5 - Test condition - VDD=12V, VIN=0V, RL=10Ω VDD=12V VDD=12V VDD=12V, VIN=5V VDD=12V, IO=2A VDD=12V VDD=12V, VIN=0V, IDL=1mA RL=10Ω VDD=12V, VIN=5V, RL=10Ω, VDH=12V VDD=12V VDD=12V, RL=0.1Ω VDD=12V VDD=12V, VIN=0V VDD=12V, RL=10Ω VDD=12V, RL=10Ω VDD=12V, VIN=0V, IO=1A, L=10mH min 6 - 3.5 - - - - .


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