LH28F020SU-L

LH28F020SU-L FEATURES 32-PIN TSOP 2M (256K × 8) Flash Memory TOP VIEW 256K × 8 Bit Configuration 5 V Write/Erase (3.3 V VCC) Access Time – For 3.3 V Read: 150 ns A11 A9 A8 A13 A14 A17 WE VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 GND DQ2 DQ1 DQ0 A0 A1 A2 A3 Minimum 2.7 V Read Capability – 180 ns Maximum Access Time (VCC = 2.7 V) 16 Independently Lockable Blocks (16K Blocks) 100,000 Erase Cycles per Block Automated Byte Write/Block Erase – Command User Interface – Status Register System Performance Enhancement – Erase Suspend for Read – Two-Byte Write – Full Chip Erase 28F020SUL15-1 Figure 1. TSOP Configuration 32-PIN SOP TOP VIEW Data Protection – Hardware Erase/Write Lockout during Power Transitions – Software Erase/Write Lockout VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC WE A17 A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset) 80 µA (MAX.) ICC in CMOS Standby State-of-the-Art 0.55 µm ETOX™ Flash Technology Packages – 32-Pin, 525-mil. SOP Package – 32-Pin, 1.2 mm × 8 mm × 20 mm TSOP (Type I) Package 28F020SUL12-20 Figure 2. SOP Configuration 1 LH28F020SU-L 2M (256K × 8) Flash Memory DQ0 - DQ7 OUTPUT BUFFER INPUT BUFFER ID REGISTE...