MX29L1611G

ADVANCED INFORMATION MX29L1611G / MX29L1611* 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns Fast page access time: 30ns (Only for 29L1611PC-90/ www.DataSheet4U.com 10/12) Sector erase architecture - 32 equal sectors of 64k bytes each - Sector erase time: 200ms typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 1.8V Software data protection Page program operation - Internal address and data latches for 64 words per page - Page programming time: 5ms typical Low power dissipation - 50mA active current - 20uA standby current Two independently Protected sectors Package type - 42 pin plastic DIP * For page mode read only GENERAL DESCRIPTION The MX29L1611G is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29L1611G includes 32 sectors of 64KB(65,536 Bytes or 32,768 words). MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29L1611G is packaged in 42 pin PDIP. The standard MX29L1611G offers access times as fast as 100ns,allowing operation of high-speed micropr...