MX29L3211

ADVANCED INFORMATION MX29L3211 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES 3.3V ± 10% write, erase and read Endurance: 10,000 cycles Fast random access time: 100ns/120ns Fast pagemode access time: 50ns www.DataSheet4U.com Page access depth: 16 bytes/8 words Sector erase architecture - 32 equal sectors of 64K word each - Sector erase time: 200ms typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 1.8V Software data protection Page program operation - Internal address and data latches for 256 bytes/128 words per page - Page programming time: 5ms typical Low power dissipation - 50mA active current - 20uA standby current Two independently Protected sectors Industry standard surface mount packaging - 44 pin SOP (500mil) - 48 TSOP(I) GENERAL DESCRIPTION The MX29L3211 is a 32-mega bit pagemode Flash memory organized as either 4M word x 8 or 2M byte x 16. The MX29L3211 includes 32 sectors of 64K words. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory and fast page mode access. The MX29L3211 is packaged 44-pin SOP and 48-pin TSOP. It is designed to be reprogrammed and erased in-system or in-...