SCHOTTKY RECTIFIER. 11DQ05 Datasheet

11DQ05 RECTIFIER. Datasheet pdf. Equivalent


Part 11DQ05
Description (11DQ05 / 11DQ06) SCHOTTKY RECTIFIER
Feature Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 www.DataSheet4U.com SCHOTTKY RECTIFIER 1.1 Amp Majo.
Manufacture International Rectifier
Datasheet
Download 11DQ05 Datasheet


Bulletin PD-2.288 rev. E 03/03 11DQ05 11DQ06 www.DataSheet4 11DQ05 Datasheet
SENSITRON SEMICONDUCTOR  Technical Data Data Sheet 2851, Re 11DQ05 Datasheet
11DQ05 Datasheet
11DQ03 - 11DQ10 PRV : 30 - 100 Volts IO : 1.1 Ampere SCHOTT 11DQ05 Datasheet
Recommendation Recommendation Datasheet 11DQ05 Datasheet




11DQ05
www.DataSheet4U.com SCHOTTKY RECTIFIER
Bulletin PD-2.288 rev. E 03/03
11DQ05
11DQ06
1.1 Amp
Major Ratings and Characteristics
Characteristics
11DQ.. Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
VF @ 1 Apk, TJ = 125°C
1.1
50/60
150
0.53
A
V
A
V
TJ range
- 40 to 150 °C
Description/ Features
The 11DQ.. axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage.
Typical applications are in switching power supplies, convert-
ers, free-wheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
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Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1



11DQ05
11DQ05, 11DQ06
Bulletin PD-2.288 rev. E 03/03
www.DataSheet4U.com
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
11DQ05
50
11DQ06
60
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
* See Fig. 4
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
EAS Non-Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
11DQ..
1.1
150
25
2.0
1.0
Units
Conditions
A 50% duty cycle @ TC = 84°C, rectangular wave form
5µs Sine or 3µs Rect. pulse Following any rated
A load condition and with
10ms Sine or 6ms Rect. pulse rated VRRM applied
mJ TJ = 25 °C, IAS = 1 Amps, L = 4 mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
IRM Max. Reverse Leakage Current
* See Fig. 2
(1)
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
11DQ.. Units Conditions
0.58
0.76
0.53
0.64
1.0
11
55
8.0
10000
V @ 1A
V @ 2A
V @ 1A
V @ 2A
TJ = 25 °C
TJ = 125 °C
mA TJ = 25 °C VR = rated VR
mA TJ = 125 °C
pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
Thermal-Mechanical Specifications
Parameters
11DQ.. Units Conditions
TJ Max. Junction Temperature Range (*)
Tstg Max. Storage Temperature Range
RthJA Max. Thermal Resistance Junction
to Ambient
-40 to 150
-40 to 150
100
°C
°C
°C/W
DC operation
Without cooling fin
RthJL Typical Thermal Resistance Junction
to Lead
81 °C/W DC operation (See Fig. 4)
wt Approximate Weight
0.33(0.012) g (oz.)
Case Style
DO-204AL(DO-41)
(*) dPtot
1
<
dTj Rth( j-a)
thermal runaway condition for a diode on its own heatsink
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