AS7C251MNTF32A

December 2004 ® AS7C251MNTF32A AS7C251MNTF36A 2.5V 1M × 32/36 Flowthrough SRAM with NTDTM Features Organization: 1,048,576 words × 32 or 36 bits NTD™architecture for efficient bus operation Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin TQFP package Byte write enables Clock enable for operation hold Multiple chip enables for easy expansion 2.5V core power supply Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation www.DataSheet4U.com Logic block diagram A[19:0] 20 D Address register Burst logic Q 20 CLK CE0 CE1 CE2 R/W BWa BWb BWc BWd ADV / LD LBO ZZ D Q 20 Write delay addr. registers CLK Control logic CLK Write Buffer CLK 1M x 32/36 SRAM Array DQ[a,b,c,d] 32/36 D Data Q Input Register CLK 32/36 32/36 32/36 32/36 CLK CEN OE Output Buffer 32/36 OE DQ[a,b,c,d] Selection guide -75 Minimum cycle time Maximum clock access time Maximum operating current Maximum standby current Maximum CMOS standby current (DC) 8.5 7.5 325 140 90 -85 10 8.5 300 130 90 -10 12 10 275 130 90 Units ns ns mA mA mA 12/23/04, v 1.1 Alliance Semiconductor P. 1 of 18 Copyright © Alliance Semiconductor. All rights reserved. AS7C251MNTF32A/36A ® 2.5V 32 Mb Synchronous SRAM products list1,2 Org 2MX18 1MX32 1MX36 2MX18 1MX32 1MX36 2MX18 1MX32 www.DataSheet4U.com 1MX36 2MX18 1MX32 1MX36 ...