Power Transistor. 2N6836 Datasheet

2N6836 Transistor. Datasheet pdf. Equivalent

Part 2N6836
Description Silicon NPN Power Transistor
Feature JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION ¡¤ With TO-3 packag.
Manufacture JMnic
Datasheet
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JMnic Product Specification Silicon NPN Power Transistors 2N6836 Datasheet
2N6836 Datasheet
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2N6836
JMnic
Silicon NPN Power Transistors
Product Specification
2N6836
DESCRIPTION
With TO-3 package
High voltage ,high speed
APPLICATIONS
Switching regulators
www.DataSheet4U.Icnovmerters
Motor controls
Deflection circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
IBM Base current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
850
450
6
15
20
10
15
175
200
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.0
UNIT
/W



2N6836
JMnic
Silicon NPN Power Transistors
Product Specification
2N6836
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
450
V
www.DataSheet4UV.cCoEmsat-1 Collector-emitter saturation voltage IC=5A; IB=0.7A
VCEsat-2
VBEsat
ICEV
Collector-emitter saturation voltage
IC=10A; IB=1.0A
TC=100
Base-emitter saturation voltage
IC=10A; IB=1.0A
TC=100
Collector cut-off current
VCE=850V; VBE=-1.5V
TC=100
IEBO Emitter cut-off current
VEB=6V; IC=0
1.2 V
2.5
3.0
V
1.5
1.5
V
0.25
1.5
mA
1.0 mA
hFE-1
DC current gain
IC=10A ; VCE=5V
8 30
hFE-2
DC current gain
IC=15A ; VCE=5V
5
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
400 pF
fT Transition frequency
IC=0.25A ; VCE=10V;f=10MHz
10
75 MHz
2





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